BGA 855N6 E6327

BGA855N6 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Appli cations Features • Operating frequencies: 1164 - 1300 MHz • Insertion power gain: 17.8dB • Low noise figure: 0.60 dB • High linearity performance IIP3: 0 dBm • Low current consumption: 4.8 mA • Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2) • RF output internally matched to 50 Ohm • Only one external matching component needed • Specifically designed for: 0.7 x 1.1 mm2 - L2/L5 GPS Signals - E5a/E5b/E6 Galileo Signals - G2/G3 Glonass Signals - B2/B3 Beidou Signals Application The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands. The high linearity performance of BGA855N6 ensures best sensitivity for the operation in 4G & 5G NSA configurations. Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Block diagram VCC AI PON AO ESD GND BGA855N6_Blockdiagram.vsd Data Sheet www.infineon.com Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Sheet 2 Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Features 1 Features • Insertion power gain: 17.8 dB • Low noise figure: 0.60 dB • Low current consumption: 4.8 mA • High linearity performance IIP3: 0 dBm • Operating frequencies: 1164 - 1300 MHz • Supply voltage: 1.1 V to 3.3 V • Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2) • B9HF Silicon Germanium technology • RF output internally matched to 50 Ohm • Only one external matching component needed • 2kV HBM ESD protection (including AI-pin) • Pb-free (RoHS compliant) package • Specifically designed for: - L2/L5 GPS Signals - E5a/E5b/E6 Galileo Signals - G2/G3 Glonass Signals - B2/B3 Beidou Signals VCC AI PON AO ESD GND BGA855N6_Blockdiagram.vsd Figure 1 Block Diagram Product Name Marking Package BGA855N6 6 TSNP-6-10 Data Sheet 3 Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Features Description The BGA855N6 is a front-end low noise amplifier for GPS L5 and L2, Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz. The LNA provides 17.8 dB gain and 0.60 dB noise figure at a current consumption of 4.8 mA in the application configuration described in Chapter 4. The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage (device optimized for 1.8V operation / also prepared to support 1.2V and 2.8V operation). OFF-state can be enabled by PON pin. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 GND Ground 2 VCC DC supply 3 AO LNA output 4 GND Ground 5 AI LNA input 6 PON Power On Control Data Sheet 4 Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Maximum Ratings 2 Maximum Ratings Table 2 Maximum Ratings Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. VCC -0.3 – 3.6 V – Voltage at pin AI VAI -0.3 – 0.9 V – Voltage at pin AO VAO -0.3 – VCC + 0.3 V – Voltage at pin PON VPON -0.3 – VCC + 0.3 V – Voltage at pin GND VGND -0.3 – 0.3 V – Current into pin VCC ICC – – 16 mA – RF input power PIN – – +25 dBm – Total power dissipation, TS < 148 °C2) Ptot – – 60 mW – Junction temperature TJ – – 150 °C – Ambient temperature range TA -40 – 85 °C – Storage temperature range TSTG -55 – 150 °C – VESD_HBM -2000 - +2000 V – Voltage at pin VCC 1) ESD capability all pins, HBM 3) 1) All voltages refer to GND-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point 3) Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5kΩ, C = 100pF) Attention: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions. Data Sheet 5 Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Electrical Characteristics 3 Electrical Characteristics Table 3 Electrical Characteristics VCC = 1.2V1) TA = 25 °C, VCC = 1.2 V, VPON = 1.2 V, f = 1164 - 1300 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VCC 1.1 1.2 3.3 V – Supply current ICC – 4.4 5.4 mA ON Mode – 0.2 3 µA OFF Mode 1.0 – VCC V ON Mode 0 – 0.4 V OFF Mode – 1.5 3 µA ON Mode – – 1 µA OFF Mode Power on voltage Supply current VPON IPON 2 Insertion power gain f = 1214MHz |S21| 16.6 17.6 18.6 dB – Noise figure2) f = 1214 MHz, ZS = 50 Ω NF – 0.60 1.10 dB – Input return loss3) f = 1214 MHz RLIN 8 11 – dB – Output return loss3) f = 1214 MHz RLOUT 12 20 – dB – Reverse isolation3) f = 1214 MHz 1/|S12|2 19 22 – dB – Power on time4)7) tS – 3 5 µs OFF to ON Mode Inband input 1dB-compression IP1dB point, f = 1214 MHz3) -18 -14 – dBm – Inband input 3rd-order intercept point3)5) f1 = 1214 MHz, f2 = f1 +/- 1 MHz IIP3 -6 -1 – dBm – Out of band input 3rd-order intercept point6)7) f1 = 1850 MHz, f2 = 2500 MHz IIP3OOB -4 1 – dBm – Stability7) k >1 – – 1) 2) 3) 4) 5) 6) 7) f = 20 MHz ... 10 GHz Based on the application described in Chapter 4 PCB losses are subtracted Verification based on AQL; not 100% tested in production LNA Gain changed to 90% of final gain value (in dB) Input power = -30 dBm for each tone Input power = -25 dBm for each tone Guaranteed by device design; not tested in production Data Sheet 6 Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Electrical Characteristics Table 4 Electrical Characteristics VCC = 1.8V1) TA = 25 °C, VCC = 1.8 V, VPON = 1.8 V, f = 1164 - 1300 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VCC 1.1 1.8 3.3 V – Supply current ICC – 4.8 5.8 mA ON Mode – 0.2 3 µA OFF Mode 1.0 – VCC V ON Mode 0 – 0.4 V OFF Mode – 2.5 7.5 µA ON Mode – – 1 µA OFF Mode Power on voltage Supply current VPON IPON 2 Insertion power gain f = 1214MHz |S21| 16.8 17.8 18.8 dB – Noise figure2) f = 1214 MHz, ZS = 50 Ω NF – 0.60 1.10 dB – Input return loss3) f = 1214 MHz RLIN 9 12 – dB – Output return loss3) f = 1214 MHz RLOUT 12 20 – dB – Reverse isolation3) f = 1214 MHz 1/|S12|2 19 22 – dB – Power on time4)7) tS – 3 5 µs OFF to ON Mode Inband input 1dB-compression IP1dB point, f = 1214 MHz3) -15 -11 – dBm – Inband input 3rd-order intercept point3)5) f1 = 1214 MHz, f2 = f1 +/- 1 MHz IIP3 -5 0 – dBm – Out of band input 3rd-order intercept point6)7) f1 = 1850 MHz, f2 = 2500 MHz IIP3OOB -4 1 – dBm – Stability7) k >1 – – 1) 2) 3) 4) 5) 6) 7) f = 20 MHz ... 10 GHz Based on the application described in Chapter 4 PCB losses are subtracted Verification based on AQL; not 100% tested in production LNA Gain changed to 90% of final gain value (in dB) Input power = -30 dBm for each tone Input power = -25 dBm for each tone Guaranteed by device design; not tested in production Data Sheet 7 Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Electrical Characteristics Table 5 Electrical Characteristics VCC = 2.8V1) TA = 25 °C, VCC = 2.8 V, VPON = 2.8 V, f = 1164 - 1300 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VCC 1.1 2.8 3.3 V – Supply current ICC – 5.4 6.4 mA ON Mode – 0.2 3 µA OFF Mode 1.0 – VCC V ON Mode 0 – 0.4 V OFF Mode – 5 10 µA ON Mode – – 1 µA OFF Mode Power on voltage Supply current VPON IPON 2 Insertion power gain f = 1214MHz |S21| 16.9 17.9 18.9 dB – Noise figure2) f = 1214 MHz, ZS = 50 Ω NF – 0.60 1.10 dB – Input return loss3) f = 1214 MHz RLIN 10 13 – dB – Output return loss3) f = 1214 MHz RLOUT 12 20 – dB – Reverse isolation3) f = 1214 MHz 1/|S12|2 19 22 – dB – Power on time4)7) tS – 3 5 µs OFF to ON Mode Inband input 1dB-compression IP1dB point, f = 1214 MHz3) -12 -8 – dBm – Inband input 3rd-order intercept point3)5) f1 = 1214 MHz, f2 = f1 +/- 1 MHz IIP3 -4 1 – dBm – Out of band input 3rd-order intercept point6)7) f1 = 1850 MHz, f2 = 2500 MHz IIP3OOB -3 2 – dBm – Stability7) k >1 – – 1) 2) 3) 4) 5) 6) 7) f = 20 MHz ... 10 GHz Based on the application described in Chapter 4 PCB losses are subtracted Verification based on AQL; not 100% tested in production LNA Gain changed to 90% of final gain value (in dB) Input power = -30 dBm for each tone Input power = -25 dBm for each tone Guaranteed by device design; not tested in production Data Sheet 8 Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Application Information 4 Application Information Application Board Configuration N1 BGA855N6 GND, 4 C1 (optional) AO, 3 RFout L1 RFin AI, 5 VCC VCC, 2 C2 (optional) PON PON, 6 GND, 1 BGA855N6_Schematic.vsd Figure 2 Application Schematic BGA855N6 Table 6 Bill of Materials Name Value Package Manufacturer Function C1 (optional) 1nF 0402 Various Input matching C2 (optional) ≥ 1nF 0402 Various RF bypass 1) L1 9.4nH 0402 Murata LQW15 type Input matching N1 BGA855N6 TSNP-6-10 Infineon SiGe LNA 1) RF bypass recommended to mitigate power supply noise A list of all application notes is available at http://www.infineon.com/gpslna.appnotes Data Sheet 9 Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Package Information 5 Package Information Figure 3 TSNP-6-10 Package Outline (top, side and bottom views) Figure 4 Footprint Recommendation TSNP-6-10 Data Sheet 10 Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Package Information 6 TSNP-6-10_MK.vsd Figure 5 Marking Layout TSNP-6-10 (top view) Figure 6 Date Code Marking TSNP-6-10 x x x x x x x x x x x x x x x x Pin1 marking Figure 7 Data Sheet Tape & Reel Dimensions TSNP-6-10 (reel diameter 180 mm, pieces/reel 12000) 11 Revision 2.0 2018-12-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Revision History Page or Item Subjects (major changes since previous revision) Revision 2.0, 2018-12-06 all Update to final status 4 Update Feature Description 11 Update Tape and Reel Drawing Data Sheet 12 Revision 2.0 2018-12-06 Please read the Important Notice and Warnings at the end of this document Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-12-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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